| dc.contributor.author | Kumar, P. | |
| dc.contributor.author | Thangaraj, R. | |
| dc.contributor.author | Sathiaraj, T.S. | |
| dc.date.accessioned | 2011-02-18T06:36:42Z | |
| dc.date.available | 2011-02-18T06:36:42Z | |
| dc.date.issued | 2008 | |
| dc.identifier.citation | Sathiaraj, T.S. et al (2008) Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor, Journal of Materials Science, Vol. 43, No. 18, pp. 6099-6104 | en_US |
| dc.identifier.issn | 0022-2461 (Print) | |
| dc.identifier.issn | 1573-4803 (Online) | |
| dc.identifier.uri | http://hdl.handle.net/10311/691 | |
| dc.description | some mathematical symbols may not come as they are in the title and abstract. | en_US |
| dc.description.abstract | The melt-quenched Sn10Sb20Se70 sample in the
bulk form was used to prepare films on well-cleaned glass
substrates by thermal evaporation method. The activation
energy for glass transition (apparent) and crystallization
has been analyzed by using the Kissinger formulation. The
X-ray diffraction study shows the crystallization of Sb2Se3
phase in the major proportion as compared to the SnSe2
phase. The SEM images film of the show the appearance of
spherical globules upon annealing below the glass transition
temperature. The effect of annealing temperature on
the electrical and optical properties has been studied. A
linear fit between DE and Eo is observed, indicating the
validity of Meyer–Neldel rule with the change in the
annealing temperature. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer Netherlands | en_US |
| dc.subject | Thermal analysis | en_US |
| dc.subject | Annealing | en_US |
| dc.subject | Glassy semiconductor | en_US |
| dc.title | Thermal analysis and annealing temperature dependence of electrical properties in Sn10Sb20Se70 glassy semiconductor | en_US |
| dc.type | Published Article | en_US |
| dc.link | http://www.springerlink.com/content/1h0t724k65x71307/ | en_US |
